K4D261638E
Recommended operating conditions Unless Otherwise Noted, T
A
=0 to 65
°
C)
128M DDR SDRAM
DC CHARACTERISTICS
Version
Parameter
Operating Current
(One Bank Active)
Precharge Standby Current
in Power-down mode
Precharge Standby Current
in Non Power-down mode
Active Standby Current
power-down mode
Active Standby Current in
in Non Power-down mode
Operating Current
( Burst Mode)
Refresh Current
Self Refresh Current
Symbol
Test Condition
-2A
I
CC1
I
CC2
P
I
CC2
N
I
CC3
P
I
CC3
N
I
CC4
I
CC5
I
CC6
Burst Lenth=2
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CC
=
t
CC
(min)
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
CKE
≥
VIH(min), CS
≥
VIH(min),
t
CC
=
t
CC
(min)
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
100
80
150
380
320
90
75
140
360
310
4
-33
210
-36
200
70
80
70
130
340
290
70
65
120
320
270
-40
190
-50
170
mA
mA
mA
mA
mA
mA
mA
mA
2
1
Unit Note
t
RC
≥
t
RFC
(min)
t
RC
≥
t
RFC
(min)
Page Burst, All Banks activated.
t
RC
≥
t
RFC
(min)
CKE
≤
0.2V
Note :
1. Measured with outputs open.
2. Refresh period is 32ms.
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to V
SS
=0V, V
DD
=2.5V+ 5%, V
DDQ
=2.5V+ 5%,T
A
=0 to 65°C)
Parameter
Input High (Logic 1) Voltage; DQ
Input Low (Logic 0) Voltage; DQ
Clock Input Differential Voltage; CK and CK
Clock Input Crossing Point Voltage; CK and CK
Symbol
V
IH
V
IL
V
ID
V
IX
Min
V
REF
+0.35
-
0.7
0.5*V
DDQ
-0.2
Typ
-
-
-
-
Max
-
V
REF
-0.35
V
DDQ
+0.6
0.5*V
DDQ
+0.2
Unit
V
V
V
V
Note
1
2
Note :
1. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same
3. For the K4D261638E-TC2A, VDD & VDDQ = 2.8V+0.1V.
- 11 -
Rev. 1.2 (Jul. 2003)
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
