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K4D261638E-TC50 参数 Datasheet PDF下载

K4D261638E-TC50图片预览
型号: K4D261638E-TC50
PDF下载: 下载PDF文件 查看货源
内容描述: 2米x 16Bit的×4银行双数据速率同步DRAM [2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 16 页 / 216 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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K4D261638E
FUNCTIONAL DESCRIPTION
Power-Up Sequence
128M DDR SDRAM
DDR SDRAMs must be powered up and initialized in a predefined manner to prevent undefined operations.
1. Apply power and keep CKE at low state (All other inputs may be undefined)
- Apply VDD before VDDQ .
- Apply VDDQ before VREF & VTT
2. Start clock and maintain stable condition for minimum 200us.
3. The minimum of 200us after stable power and clock(CK,CK ), apply NOP and take CKE to be high .
4. Issue precharge command for all banks of the device.
5. Issue a EMRS command to enable DLL
*1
6. Issue a MRS command to reset DLL. The additional 200 clock cycles are required to lock the DLL.
*
1,2
7. Issue precharge command for all banks of the device.
8. Issue at least 2 or more auto-refresh commands.
9. Issue a mode register set command with A8 to low to initialize the mode register.
*1 The additional 200cycles of clock input is required to lock the DLL after enabling DLL.
*2 Sequence of 6&7 is regardless of the order.
Power up & Initialization Sequence
0
CK,CK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
~
~ ~
~
Command
precharge
ALL Banks
EMRS
MRS
DLL Reset
precharge
ALL Banks
1st Auto
Refresh
2nd Auto
Refresh
~ ~
t
RP
2 Clock min.
2 Clock min.
tRP
t
RFC
t
RFC
~
2 Clock min.
Mode
Register Set
Any
Command
~
Inputs must be
stable for 200us
* When the operating frequency is changed, DLL reset should be required again.
After DLL reset again, the minimum 200 cycles of clock input is needed to lock the DLL.
~
200 Clock min.
- 7 -
Rev. 1.2 (Jul. 2003)