K4D261638E
Revision History
Revision 1.2 (July 21, 2003)
• Added K4D261638E-TC2A in the spec
128M DDR SDRAM
Revision 1.1 (January 16, 2003)
• Changed ICC6 from 2mA to 4mA
• Changed ICC5 of K4D261638E-TC33 from 260mA to 320mA
• Changed ICC5 of K4D261638E-TC36 from 250mA to 310mA
• Changed ICC5 of K4D261638E-TC40 from 230mA to 290mA
• Changed ICC5 of K4D261638E-TC50 from 210mA to 270mA
Revision 1.0 (December 24, 2002)
• Defined DC spec
• Changed tRC of K4D261638E-TC33/36 from 13tCK to 15tCK
• Changed tRFC of K4D261638E-TC33/36 from 15tCK to 17tCK
• Changed tRAS of K4D261638E-TC33/36 from 9tCK to 10tCK
• Changed tRP of K4D261638E-TC33/36 from 4tCK to 5tCK
• Changed tDAL of K4D261638E-TC33/36 from 7tCK to 8tCK
Revision 0.3 (December 3, 2002) -
Target Spec
• Typo corrected
Revision 0.2 (November 12, 2002) -
Target Spec
• Changed tPDEX of K4D261638E-TC33/36/40/50 from 1tCK+tIS to 3tCK+tIS
Revision 0.1 (November 7, 2002) -
Target Spec
• Changed tCK(max) of K4D261638E-TC33 from 4ns to 10ns
• Changed tCK(max) of K4D261638E-TC36 from 6ns to 10ns
• Typo corrected
Revision 0.0 (October 28, 2002) -
Target Spec
• Defined Target Specification
- 2 -
Rev. 1.2 (Jul. 2003)
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
