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K6R1016C1D-JC10 参数 Datasheet PDF下载

K6R1016C1D-JC10图片预览
型号: K6R1016C1D-JC10
PDF下载: 下载PDF文件 查看货源
内容描述: 64Kx16位高速CMOS静态RAM ( 3.3V工作)工作在商用和工业温度范围。 [64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 194 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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K6R1004V1D
ABSOLUTE MAXIMUM RATINGS*
Parameter
Voltage on Any Pin Relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Power Dissipation
Storage Temperature
Operating Temperature
Commercial
Industrial
Symbol
V
IN
, V
OUT
V
CC
P
d
T
STG
T
A
T
A
Rating
-0.5 to 4.6
-0.5 to 4.6
1
-65 to 150
0 to 70
-40 to 85
PRELIMINARY
PRELIMINARY
for AT&T
CMOS SRAM
Unit
V
V
W
°C
°C
°C
*
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(T
A
=0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3*
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3**
0.8
Unit
V
V
V
V
* V
IL
(Min) = -2.0V a.c (Pulse Width
8ns) for I
20mA.
** V
IH
(Max) = V
CC
+ 2.0V a.c (Pulse Width
8ns) for I
20mA.
DC AND OPERATING CHARACTERISTICS*
(T
A
=0 to 70°C, Vcc=3.3±0.3V, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Symbol
I
LI
I
LO
I
CC
V
IN
=V
SS
to V
CC
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
=V
SS
to V
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
=V
IH
or V
IL,
I
OUT
=0mA
Com.
Ind.
Standby Current
I
SB
I
SB1
Output Low Voltage Level
Output High Voltage Level
V
OL
V
OH
Min. Cycle, CS=V
IH
f=0MHz, CS≥V
CC
-0.2V,
V
IN
≥V
CC
-0.2V or V
IN
≤0.2V
I
OL
=8mA
I
OH
=-4mA
8ns
10ns
8ns
10ns
Test Conditions
Min
-2
-2
-
-
-
-
-
-
-
2.4
Max
2
2
80
65
90
75
20
5
0.4
-
V
V
mA
Unit
µA
µA
mA
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*
(T
A
=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
* Capacitance is sampled and not 100% tested.
Symbol
C
I/O
C
IN
Test Conditions
V
I/O
=0V
V
IN
=0V
TYP
-
-
Max
8
6
Unit
pF
pF
-4-
Rev. 3.0
July 2004