K9GAG08B0M
K9GAG08U0M K9LBG08U1M
Document Title
2G x 8 Bit NAND Flash Memory
Revision History
Revision No
0.0
0.1
Preliminary
FLASH MEMORY
History
1. Initial issue
1. Add read status 2 command F1h
2. Add 2-plane read operation
3. Add address map (Table2)
4. Remove adjacent page relationship table
5. Modify figure of 2-plane copy-back program with random data input
6. Modify figure of Rp vs tr ,tf & Rp vs ibusy
7. Data retention 5years -> 10 years
8. Remove K9LBG08U1M
9. Modify figure of 2-plane page program
10. Add nWP timing guide
11. Add 2-plane read for copy-back operation
12. Add 2-plane random data out operation
13. Modify command table and note
14. Modify invalid block definition
15. Add program operation with 2KB data loading timing guide
16. tRLOH is valid when frequency is higher than 20MHz.
tRHOH starts to be valid when frequency is lower than 20MHz.
-> tRLOH is valid when frequency is higher than 33MHz.
tRHOH starts to be valid when frequency is lower than 33MHz.
1. Add 2.7V part
2. tCDS is added. (min. 10ns)
1. Endurance is changed (10K->5K)
Draft Date
Remark
April 12th 2006 Advance
Sep. 21th 2006 Advance
0.2
Dec. 8th 2006
Advance
0.3
0.4
0.5
0.6
Dec. 12th 2006
Dec. 21st 2006
Advance
Preliminary
Preliminary
Preliminary
1. Endurance is changed (5K -> TBD)
1. K9GAG08U0M-I/K9LBG08U0M-I is added.
2. Random data output for copy back is added.
3. Wafer level capacitance is added.
Jan. 12th 2007
Feb. 12th 2007
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
2
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
