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KM68512ALG-7L 参数 Datasheet PDF下载

KM68512ALG-7L图片预览
型号: KM68512ALG-7L
PDF下载: 下载PDF文件 查看货源
内容描述: 64Kx8位低功耗CMOS静态RAM [64Kx8 bit Low Power CMOS Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 145 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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KM68512A Family
AC OPERATING CONDITIONS
TEST CONDITIONS
( Test Load and Input/Output Reference)
Input pulse level : 0.8 to 2.4V
Input rising and falling time : 5ns
Input and output reference voltage :1.5V
Output load(see right) : C
L
=100pF+1TTL
CMOS SRAM
C
L
1)
1. Including scope and jig capacitance
AC CHARACTERISTICS
(Vcc=4.5~5.5V, KM68512A Family:T
A
=0 to 70°C,
Parameter List
Symbol
KM68512AI Family:T
A
=-40 to 85°C)
Speed Bins
55ns
70ns
Max
-
55
55
25
-
-
20
20
-
-
-
-
-
-
-
20
-
-
-
Min
70
-
-
-
10
5
0
0
10
70
60
0
60
50
0
0
30
0
5
Max
-
70
70
35
-
-
25
25
-
-
-
-
-
-
-
25
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
Min
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Read
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
t
RC
t
AA
t
CO1
, t
CO2
t
OE
t
LZ
t
OLZ
t
HZ
t
OHZ
t
OH
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
55
-
-
-
10
5
0
0
10
55
45
0
45
40
0
0
25
0
5
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
V
DR
KM68512AL/L-L
Data retention current
I
DR
KM68512ALI/LI-L
Data retention set-up time
Recovery time
t
SDR
t
RDR
Symbol
Test Condition
CS
1
1)
≥Vcc-0.2V
Vcc=3.0V CS
1
≥Vcc-0.2V
CS
2
≥Vcc-0.2V
or CS
2
≤0.2V
L-Ver
LL-Ver
L-Ver
LL-Ver
Min
2.0
-
-
-
-
0
5
Typ
-
1
0.5
-
-
-
-
Max
5.5
50
10
50
25
-
-
Unit
V
µA
See data retention waveform
ms
1. CS
1
≥Vcc-0.2V,
CS
2
≥Vcc-0.2V(
CS
1
controlled) or CS
2
≤0.2V(CS
2
controlled).
5
Revision 4.0
January 1997