欢迎访问ic37.com |
会员登录 免费注册
发布采购

KM68512ALG-7L 参数 Datasheet PDF下载

KM68512ALG-7L图片预览
型号: KM68512ALG-7L
PDF下载: 下载PDF文件 查看货源
内容描述: 64Kx8位低功耗CMOS静态RAM [64Kx8 bit Low Power CMOS Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 145 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
 浏览型号KM68512ALG-7L的Datasheet PDF文件第1页浏览型号KM68512ALG-7L的Datasheet PDF文件第2页浏览型号KM68512ALG-7L的Datasheet PDF文件第3页浏览型号KM68512ALG-7L的Datasheet PDF文件第4页浏览型号KM68512ALG-7L的Datasheet PDF文件第5页浏览型号KM68512ALG-7L的Datasheet PDF文件第7页浏览型号KM68512ALG-7L的Datasheet PDF文件第8页浏览型号KM68512ALG-7L的Datasheet PDF文件第9页  
KM68512A Family
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS1=OE=V
IL
, WE=V
IH
)
t
RC
Address
t
OH
Data Out
Previous Data Valid
t
AA
CMOS SRAM
Data Valid
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
t
RC
Address
t
AA
t
CO1
CS
1
t
HZ(1,2)
CS
2
t
CO2
t
OE
t
OH
OE
t
OLZ
t
LZ
Data Valid
t
OHZ
Data out
NOTES (READ
CYCLE)
High-Z
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
6
Revision 4.0
January 1997