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HFP7N80 参数 Datasheet PDF下载

HFP7N80图片预览
型号: HFP7N80
PDF下载: 下载PDF文件 查看货源
内容描述: 800V N沟道MOSFET [800V N-Channel MOSFET]
分类和应用:
文件页数/大小: 8 页 / 1137 K
品牌: SEMIHOW [ SEMIHOW CO.,LTD. ]
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HFP7N80
Electrical Characteristics
T
C
=25
°C
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
V
GS
= 10 V, I
D
= 3.5 A
2.5
--
--
1.55
4.5
1.9
V
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
I
D
= 250
㎂, Referenced to25℃
V
DS
= 800 V, V
GS
= 0 V
V
DS
= 640 V, T
C
= 125℃
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
800
--
--
--
--
--
--
0.93
--
--
--
--
--
--
1
10
100
-100
V
V/℃
ΔBV
DSS
Breakdown Voltage Temperature
Coefficient
/ΔT
J
I
DSS
I
GSSF
I
GSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1500
120
18
1950
155
24
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 4,5)
V
DS
= 400 V, I
D
= 7.0 A,
R
G
= 25
--
--
--
--
--
--
--
40
120
60
70
35
10
13
80
240
120
140
45
--
--
nC
nC
nC
V
DS
= 640V, I
D
= 7.0 A,
V
GS
= 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 7.0 A, V
GS
= 0 V
I
S
= 7.0 A, V
GS
= 0 V
di
F
/dt = 100 A/μs
(Note 4)
--
--
--
--
--
--
--
--
780
9.0
7.0
28
1.4
--
--
A
V
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=22.2mH, I
AS
=7.0A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
3. I
SD
≤7.0A, di/dt≤200A/μs, V
DD
≤BV
DSS
, Starting T
J
=25
°C
4. Pulse Test : Pulse Width
≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
SEMIHOW REV.A0,June 2005