HFP7N80
Typical Characteristics
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
0
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
10
1
150
o
C
o
25 C
10
0
-55
o
C
10
-1
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25
℃
10
-2
10
-1
10
0
10
1
10
-1
※
Notes :
1. V
DS
= 50V
2. 250μ s Pulse Test
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
4.0
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
3.0
V
GS
= 10V
V
GS
= 20V
2.5
I
DR
, Reverse Drain Current [A]
3.5
10
1
10
0
2.0
150
℃
25℃
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
1.5
※
Note : T
J
= 25
℃
1.0
0
3
6
9
12
15
18
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
2500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
DS
= 160V
C
iss
V
GS
, Gate-Source Voltage [V]
2000
10
V
DS
= 400V
V
DS
= 640V
Capacitance [pF]
8
1500
C
oss
1000
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
6
4
500
C
rss
2
※
Note : I
D
= 7.0A
0
-1
10
0
10
0
10
1
0
5
10
15
20
25
30
35
40
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎
SEMIHOW REV.A0,June 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
