HFP7N80
Typical Characteristics
1.2
(continued)
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 3.5 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 μ A
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
10
2
8
Operation in This Area
is Limited by R
DS(on)
10
µs
100
µs
1 ms
10 ms
DC
6
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
1
10
0
4
10
-1
※
Notes :
o
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
0
2
10
-2
10
10
1
10
2
10
3
0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
10
0
D=0.5
Z
θ JC
Thermal Response
(t),
0.2
10
-1
0.1
0.05
0.02
0.01
※
Notes :
(t)
W
1. Z
θ JC
= 0.75
℃/
Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ JC
(t)
P
DM
single pulse
10
-2
t
1
-3
t
2
10
0
10
-5
10
-4
10
10
-2
10
-1
10
1
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎
SEMIHOW REV.A0,June 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
