PRELIMINARY
SemiWell
Semiconductor
SFD30N06
N-Channel MOSFET
Features
■
■
■
■
■
Low R
DS
(on) (0.04Ω )@V
GS
=10V
Gate Charge (Typical 27nC)
Improved dv/dt Capability
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
Symbol
●
2. Drain
1. Gate
◀
●
●
▲
3. Source
General Description
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
D-PACK (TO-252)
2
1
3
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
dv/dt
P
D
T
STG,
T
J
T
L
Drain to Source Voltage
Continuous Drain Current(@T
C
= 25
°C)
Continuous Drain Current(@T
C
= 100
°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T
A
= 25 °C)
Total Power Dissipation(@T
C
= 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 2)
(Note 3)
(Note 1)
Parameter
Value
60
23
15
92
±20
430
7.0
2.5
44
0.35
- 55 ~ 150
300
Units
V
A
A
A
V
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min.
-
-
Typ.
-
-
Max.
2.85
110
Units
°C/W
°C/W
December, 2002. Rev. 0.
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/7
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
