SFD30N06
Fig 1. On-State Characteristics
Fig 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
101
101
150oC
25oC
-55oC
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 25V
2. 250µ s Pulse Test
100
100
10-1
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
100
80
60
40
20
0
VGS = 10V
VGS = 20V
101
150℃
25℃
※ Notes :
1. VGS = 0V
※ Note : T = 25℃
2. 250µ s Pulse Test
J
100
0.4
0
20
40
60
80
100
120
140
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD[V], Source-Drain voltage
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
2000
1500
1000
500
0
12
C
iss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
VDS = 30V
VDS = 48V
10
8
※ Notes :
1. VGS = 0V
2. f=1MHz
C
iss
6
4
Coss
C
2
rss
※ Note : ID = 30.0 A
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3/7
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