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SFD30N06 参数 Datasheet PDF下载

SFD30N06图片预览
型号: SFD30N06
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOSFET [N-Channel MOSFET]
分类和应用:
文件页数/大小: 7 页 / 1050 K
品牌: SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
 浏览型号SFD30N06的Datasheet PDF文件第1页浏览型号SFD30N06的Datasheet PDF文件第2页浏览型号SFD30N06的Datasheet PDF文件第3页浏览型号SFD30N06的Datasheet PDF文件第5页浏览型号SFD30N06的Datasheet PDF文件第6页浏览型号SFD30N06的Datasheet PDF文件第7页  
SFD30N06  
Fig 7. Breakdown Voltage Variation  
Fig 8. On-Resistance Variation  
vs. Junction Temperature  
vs. Junction Temperature  
1.2  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.1  
1.0  
Notes :  
1. VGS = 0 V  
2. ID = 250 µ A  
0.9  
0.8  
Notes :  
1. VGS = 10 V  
2. ID = 11.5 A  
-100  
-50  
0
50  
100  
150  
200  
-100  
-50  
0
50  
100  
150  
200  
TJ, Junction Temperature [oC]  
TJ, Junction Temperature [oC]  
Fig 10. Maximum Drain Current  
vs. Case Temperature  
Fig 9. Maximum Safe Operating Area  
103  
102  
101  
100  
10-1  
25  
20  
15  
10  
5
Operation in This Area  
is Limited by R DS(on)  
100 µs  
1 ms  
10 ms  
DC  
Notes :  
1. TC = 25 o  
C
C
2. TJ = 150 o  
3. Single Pulse  
0
10-1  
100  
101  
102  
25  
50  
75  
100  
125  
150  
TC' Case Temperature [oC]  
VDS, Drain-Source Voltage [V]  
Fig 11. Transient Thermal Response Curve  
D =0.5  
0.2  
100  
10-1  
10-2  
N otes :  
0.1  
1. Z (t) = 2.85 /W M ax.  
2. DθuJtCy Factor, D =t1/t2  
3. TJM - TC = PD M * Z (t)  
0.05  
θ
JC  
0.02  
0.01  
single pulse  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
t1, Square W ave Pulse D uration [sec]  
4/7  
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.