AOT210L/AOB210L
30V N-Channel MOSFET
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
TO220
V
GS
=4.5V, I
D
=20A
TO220
V
GS
=10V, I
D
=20A
TO263
V
GS
=4.5V, I
D
=20A
TO263
V
DS
=5V, I
D
=20A
T
J
=125°C
1
400
2.4
3.7
3
2.1
2.7
78
0.65
2.9
4.7
3.7
2.6
3.5
S
1
105
2800
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
920
50
0.5
39
V
GS
=10V, V
DS
=15V, I
D
=20A
17
7
4
V
GS
=10V, V
DS
=20V, R
L
=0.75Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=500A/µs
2
Min
30
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
1
5
100
1.7
2.2
µA
nA
V
A
R
DS(ON)
Static Drain-Source On-Resistance
mΩ
g
FS
V
SD
I
S
Forward Transconductance
I
S
=1A,V
GS
=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
G
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
3520
1320
90
1
48
22
9
7
11
10
38
11
4300
1720
120
1.5
58
27
11
10
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
14
40
21
58
28
76
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
ns
nC
A. The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The Power
A
dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 pulses, duty cycle 0.5% max.
µs
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
2
H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25°C.
A
2/6
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