AOT210L/AOB210L
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=20V
I
D
=20A
Capacitance (pF)
5000
8
V
GS
(Volts)
4000
C
iss
6
3000
4
2000
C
oss
1000
C
rss
2
0
0
20
30
40
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
50
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
1000.0
100.0
I
D
(Amps)
10.0
600
R
DS(ON)
limited
DC
10µs
10µs
100µs
Power (W)
500
400
300
200
100
0.0001
1ms
10ms
T
J(Max)
=175°C
T
C
=25°C
1.0
0.1
0.0
0.01
T
J(Max)
=175°C
T
C
=25°C
17
5
2
10
0.1
1
V
DS
(Volts)
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
0.01
0.1
1
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.85°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
1
0.1
P
D
T
on
0.01
0.00001
Single Pulse
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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