AOD476 参数 Datasheet PDF下载

AOD476

N-Channel Enhancement Mode Field

Effect Transistor

Electrical Characteristics (T

J

=25°C unless otherwise noted)

Parameter

Symbol

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Conditions

I

D

=250uA, V

GS

=0V

V

DS

=16V, V

GS

=0V

T

J

=55°C

V

DS

=0V, V

GS

=±16V

V

DS

=V

GS

, I

D

=250µA

V

GS

=10V, V

DS

=5V

V

GS

=10V, I

D

=20A

R

DS(ON)

Static Drain-Source On-Resistance

T

J

=125°C

V

GS

=4.5V, I

D

=10A

V

GS

=2.5V, I

D

=4A

g

FS

V

SD

I

S

Forward Transconductance

Diode Forward Voltage

V

DS

=5V, I

D

=20A

I

S

=1A, V

GS

=0V

G

Min

20

Typ

Max

Units

V

1

5

100

0.6

75

14

21

20

57

19

0.77

1

30

900

28

79

21

1.26

2

uA

nA

V

A

mΩ

S

V

A

pF

pF

pF

1.35

18

9

Ω

nC

nC

nC

nC

ns

ns

ns

ns

ns

nC

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V

GS

=0V, V

DS

=0V, f=1MHz

V

GS

=0V, V

DS

=10V, f=1MHz

162

105

0.9

15

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

I

F

=20A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge I

F

=20A, dI/dt=100A/µs

V

GS

=10V, V

DS

=10V, R

L

=0.5Ω,

R

GEN

=3Ω

V

GS

=10V, V

DS

=10V, I

D

=20A

7.2

1.8

2.8

4.5

9.2

18.7

3.3

18

9.5

A: The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with

0

T

A

=25°C. The Power dissipation P

DSM

is based on R

θJA

and the maximum allowed junction temperature of 150°C. The value in any given

application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P

D

is based on T

J(MAX)

=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=175°C.

D. The R

θJA

is the sum of the thermal impedence from junction to case R

θJC

and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs

pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)

=175°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The SOA

curve provides a single pulse rating.

*This device is guaranteed green after data code 8X11 (Sep 1

ST

2008).

Rev2: Oct. 2008

2/6

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