AOD476
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
200
0
0
3
6
9
12
15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100
0
0
C
rss
10
15
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
20
1400
1200
Capacitance (pF)
V
DS
=12.5V
I
D
=20A
C
iss
1000
800
600
400
C
oss
1.4
494
692
593
830
193
18
10µs
100µs
DC
Power (W)
200
160
120
80
40
T
J(Max)
=175°C
T
C
=25°C
10
I
D
(Amps)
R
DS(ON)
limited
1
T
J(Max)
=175°C, T
C
=25°C
1ms
0
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
100
0.0001
0.001
59
0.1
Pulse
142
(s)
Width
0.01
1
10
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=4.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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