Freescale
AO4900 / MC4900
SPECIFICATIONS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
A
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Test Conditions
V
DS
= V
GS
, I
D
= 250 uA
V
DS
= 0 V, V
GS
= ± 20 V
Limits
Unit
Min Typ Max
1
±100
o
nA
uA
A
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55 C
1
10
20
34
41
25
0.77
4.0
1.1
1.4
12
10
60
15
50
Drain-Source On-Resistance
Forward Tranconductance
Diode Forward Voltage
A
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 6.9 A
V
GS
= 4.5 V, I
D
=6.0 A
V
DS
= 15 V, I
D
= 6.9 A
I
S
= 1.7 A, V
GS
= 0 V
V
DS
= 15 V, V
GS
= 4.5 V,
I
D
= 6.9 A
V
DD
= 15 V, R
L
= 15
Ω
, I
D
= 1 A,
V
GEN
= 10 V
I
F
= 1.7 A, Di/Dt = 100 A/uS
mΩ
S
V
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Source-Ddrain Reverse Recovery Time
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
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