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MC4900 参数 Datasheet PDF下载

MC4900图片预览
型号: MC4900
PDF下载: 下载PDF文件 查看货源
内容描述: 双N通道30 -V ( DS ) MOSFET的高功率和电流处理能力 [Dual N-Channel 30-V (D-S) MOSFET High power and current handling capability]
分类和应用:
文件页数/大小: 6 页 / 461 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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Freescale
AO4900 / MC4900
Typical Electrical Characteristics (N-Channel)
ID, DRAIN CURRENT (A)
V
GS
= 10V
6.0V
4.0V
40
30
20
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
50
2
1.7
1.4
1.1
0.8
0.5
0
10
20
30
40
50
4.5V
6.0V
10V
3.0V
10
0
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
1.6
Figure 2. On-Resistance with Drain Current
1.4
V
GS
= 10V
I
D
= 10A
0.05
I
D
= 10A
Normalized R (on)
DS
1.2
RDS(ON), ON-Resistance
(OHM )
0.04
0.03
0.02
1.0
0 .8
T
A
= 25 C
0.01
0
2
4
6
8
10
o
0 .6
-50
-2 5
0
25
50
75
10 0
12 5
150
T
J
Juncat ion T emperature (C)
VGS, Gate To Source Voltage (V)
Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with
Gate to Source Voltage
60
V
D
=5V
50
-55C
IS, REVERSE DRAIN CURRENT (A)
100
V
GS
= 0V
10
I
D
Drain Current (A)
25C
40
30
125C
20
10
0
0
1
2
3
4
5
6
V
GS
Ga te to S o urc e Vo lta ge (V)
1
T
A
= 125 C
o
0.1
25 C
o
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
3
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