2-1
1
2
3
4
5
6
7
8
9
10
Primary Features
Current consumption is reduced with use of the burst mode, promoting standby compatibility
with a single converter.
The optimized switching device provides ideal partial resonance operation for high efficiency
and low noise.
The 900V resistant switching device (high-speed IGBT) simplifies design of power supplies
for worldwide input.
Power consumption under micro-load is extremely low (burst mode).
Use of a drain kick circuit eliminates the need for a start-up resistor.
The use of a soft drive circuit reduces noise.
Incorporates an over-current protection function (primary current detect, Ton limit).
Incorporates over-voltage protection and thermal shutdown functions.
A power supply circuit may be configured with the minimum of external components.
The use of the fully molded package is beneficial for insulation design.
2-2
Product Lineup
O u t p u t c a p a c i t y P o [ W ] (r e f e r e n c e v a l u e s )
Mod el
Main sw itch
Peak
i n put
voltage
Peak
inp ut
curr ent
I npu t
voltage
r ange
AC 90 ~1 3 2V
MR 2520
MR 2540
MR 2920
MR 2940
H igh- spe ed
IGBT
MOSFET
8
500
13
7
900
10
100
150
-
-
I np u t
voltage
r a n ge
A C 90 ~ 27 6 V
-
-
10 0
15 0
In put
voltage
r a nge
A C1 8 0~ 2 7 6V
-
-
150
225
Table 1 MR2000 Series Product Lineup
Password Vol.02-06-e
MR2000 Series
P
.02
All Rights Reserved Copyright (C) SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. 2002
SHINDENGEN [ SHINDENGEN ELECTRIC MFG.CO.LTD ]
