2-3
Equivalent Circuit and Appearance
7
Drain/Collector
Z/C
Q1
IC1
F/B
GND
Vcc
Vin
1
2
3
4
5
6 Source/Emitter
Fig.1 Equivalent Circuit
Fig.2 Appearance
3
3-1
Features
Main Switching Device - High-speed IGBT (MR2900 Series)
The unique (patented) structure of the Shindengen high-speed IGBT provides both high-speed
switching and low saturation voltage in a single device, thus also permitting its use in switching
power supplies. This newly developed high-speed IGBT is positioned between the MOSFET and
the bipolar transistor (Fig.3).
Fig.4 shows a comparison of losses in the 900V resistant switching device in the worldwide
partial resonance power supply. The loss curve is comparatively flat in relation to the wide range
of input voltage, and as such the device is optimized for use with a variety of international input
voltages.
Device
MOSFET
Symbol
Drive
Voltage
ON loss
Large
Switching loss
Small
High-speed
IGBT
Voltage
IGBT
Voltage
BJT
Current
Small
Large
Fig.3 Comparison of Switching Devices
Password Vol.02-06-e MR2000 Series
P
.03
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SHINDENGEN [ SHINDENGEN ELECTRIC MFG.CO.LTD ]
