Bipolar transistor
Main switch losses P [W]
High-speed IGBT
MOSFET
100V
200V
300V
AC input voltage Vin [V]
Fig.4 Comparison of Losses in 900V Resistant Switching Device
3-2
Advantages of 900V Resistance in the High-speed IGBT (MR2900 Series)
The MR2900 Series incorporates a 900V resistant high-speed IGBT for almost ideal partial
resonance operation.
Fig.5 shows a comparison between waveforms with 650V and 900V resistance. The use of the
900V resistant device allows a sufficiently small resonance condenser discharge current, with
consequently reduced switching losses. This in turn allows an increase in the capacity of the
resonance condenser C1, thus allowing lower noise and a power supply of higher efficiency.
The ability to maintain a sufficient margin of voltages resistance eliminates the need for a DCR
snubber circuit, thus reducing the number of components required and allowing design of power
supplies with superior cost-performance.
800
700
600
500
400
300
200
100
0
Voltage [V]
900V design
650V design
Current [A]
Small switching loss
Fig.5 Comparison between Waveforms with 650V and 900V Resistance
Password Vol.02-06-e MR2000 Series
P
.04
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