HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
10. S-80723AL/AL-AL-X, S-80723AN/AN-DL-X
S-80723SL-AL-X, S-80723SN-DL-X (Detection voltage : 2.244 to 2.356 V)
(Unless otherwise specified : Ta=25°C)
Test
Typ.
Max.
Unit
circuit
2.300
2.356
V
1
-V
DET
-V
DET
V
1
×0.05
×0.08
µA
1.4
3.5
2
15.0
V
1
0.50
mA
3
0.62
±0.29
mV/°C
4
Parameter
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
Conditions
Min.
2.244
-V
DET
×0.02
1.0
0.23
0.36
V
DD
= 4.5 V
Nch
V
DD
= 1.2 V
V
DS
= 0.5 V
Pch (CMOS V
DD
= 4.8 V
output)
V
DS
= 0.5 V
Ta=-30°C to 80°C
Temperature
characteristic of -
V
DET
∆-V
DET
∆Ta
11. S-80724AL/AL-AM-X, S-80724AN/AN-DM-X, S-80724SN-DM-X (Detection voltage : 2.342 to 2.458 V)
(Unless otherwise specified : Ta=25°C)
Test
Typ.
Max.
Unit
circuit
2.400
2.458
V
1
-V
DET
-V
DET
V
1
×0.05
×0.08
µA
1.4
3.5
2
15.0
V
1
0.50
mA
3
0.62
±0.30
mV/°C
4
Parameter
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
Conditions
Min.
2.342
-V
DET
×0.02
1.0
0.23
0.36
V
DD
= 4.5 V
Nch
V
DD
= 1.2 V
V
DS
= 0.5 V
Pch (CMOS V
DD
= 4.8 V
output)
V
DS
= 0.5 V
Ta=-30°C to 80°C
Temperature
characteristic of -
V
DET
∆-V
DET
∆Ta
12. S-80725AL/AL-AN-X, S-80725AN/AN-DN-X
S-80725SL-AN-X, S-80725SN-DN-X (Detection voltage : 2.440 to 2.560 V)
(Unless otherwise specified : Ta=25°C)
Test
Typ.
Max.
Unit
circuit
2.500
2.560
V
1
-V
DET
-V
DET
V
1
×0.05
×0.08
µA
1.4
3.5
2
15.0
V
1
0.50
mA
3
0.62
±0.31
mV/°C
4
Parameter
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
Conditions
Min.
2.440
-V
DET
×0.02
1.0
0.23
0.36
V
DD
= 4.5 V
Nch
V
DD
= 1.2 V
V
DS
= 0.5 V
Pch (CMOS V
DD
= 4.8 V
output)
V
DS
= 0.5 V
Ta=-30°C to 80°C
Temperature
characteristic of -
V
DET
∆-V
DET
∆Ta
10
Seiko Instruments Inc.
SII [ SEIKO INSTRUMENTS INC ]
