HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Electrical Characteristics
1.
S-80715AL-AC-X, S-80715AN-DC-X (Detection voltage : 1.464 to 1.536 V)
(Unless otherwise specified : Ta=25°C)
Test
Typ.
Max.
Unit
circuit
1.500
1.536
V
1
-V
DET
-V
DET
V
1
×0.05
×0.08
µA
1.4
3.5
2
15.0
V
1
0.50
mA
3
0.62
±0.19
mV/°C
4
Parameter
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
Conditions
Min.
1.464
-V
DET
×0.02
1.0
0.23
0.36
V
DD
= 3.0 V
Nch
V
DD
= 1.2 V
V
DS
= 0.5 V
Pch (CMOS V
DD
= 4.8 V
output)
V
DS
= 0.5 V
Ta=-30°C to 80°C
Temperature
characteristic of -
V
DET
∆-V
DET
∆Ta
2.
S-80716AL-AD-X, S-80716AN/AN-DD-X (Detection voltage : 1.561 to 1.639 V)
(Unless otherwise specified : Ta=25°C)
Test
Typ.
Max.
Unit
circuit
1.600
1.639
V
1
-V
DET
-V
DET
V
1
×0.05
×0.08
µA
1.4
3.5
2
15.0
V
1
0.50
mA
3
0.62
±0.20
mV/°C
4
Parameter
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
Conditions
Min.
1.561
-V
DET
×0.02
1.0
0.23
0.36
V
DD
= 3.0 V
Nch
V
DD
= 1.2 V
V
DS
= 0.5 V
Pch (CMOS V
DD
= 4.8 V
output)
V
DS
= 0.5 V
Ta=-30°C to 80°C
Temperature
characteristic of -
V
DET
∆-V
DET
∆Ta
3.
S-80717AL/AL-AE-X, S-80717AN/AN-DE-X, S-80717SN-DE-X (Detection voltage : 1.659 to 1.741 V)
(Unless otherwise specified : Ta=25°C)
Test
Typ.
Max.
Unit
circuit
1.700
1.741
V
1
-V
DET
-V
DET
V
1
×0.05
×0.08
µA
1.4
3.5
2
15.0
V
1
0.50
mA
3
0.62
±0.21
mV/°C
4
Parameter
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
Conditions
Min.
1.659
-V
DET
×0.02
1.0
0.23
0.36
V
DD
= 3.0 V
Nch
V
DD
= 1.2 V
V
DS
= 0.5 V
Pch (CMOS V
DD
= 4.8 V
output)
V
DS
= 0.5 V
Ta=-30°C to 80°C
Temperature
characteristic of -
V
DET
∆-V
DET
∆Ta
Seiko Instruments Inc.
7
SII [ SEIKO INSTRUMENTS INC ]
