HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
13. S-80725AH-BN-X (Detection voltage : 2.440 to 2.560 V)
(Unless otherwise specified : Ta=25°C)
Test
Typ.
Max.
Unit
circuit
2.500
2.560
V
1
-V
DET
-V
DET
V
1
×0.05
×0.08
µA
1.4
3.5
2
15.0
V
1
0.09
mA
4
8.36
±0.31
mV/°C
3
Parameter
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
Conditions
Min.
2.440
-V
DET
×0.02
1.0
0.03
4.06
V
DD
= 4.5 V
Pch
V
DD
= 1.2 V
V
DS
= 0.5 V
Nch
V
DD
= 4.8 V
V
DS
= 0.5 V
Ta=-30°C to 80°C
Temperature
characteristic of -
V
DET
∆-V
DET
∆Ta
14. S-80726AL-AP-X, S-80726AN/AN-DP-X (Detection voltage : 2.537 to 2.663 V)
(Unless otherwise specified : Ta=25°C)
Test
Typ.
Max.
Unit
circuit
2.600
2.663
V
1
-V
DET
-V
DET
V
1
×0.05
×0.08
µA
1.0
3.0
2
15.0
V
1
0.50
mA
3
0.62
±0.33
mV/°C
4
Parameter
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
Conditions
Min.
2.537
-V
DET
×0.02
1.0
0.23
0.36
V
DD
= 4.5 V
Nch
V
DD
= 1.2 V
V
DS
= 0.5 V
Pch (CMOS V
DD
= 4.8 V
output)
V
DS
= 0.5 V
Ta=-30°C to 80°C
Temperature
characteristic of -
V
DET
∆-V
DET
∆Ta
15. S-80727AL/AL-AQ-X, S-80727AN/AN-DQ-X
S-80727SL-AQ-X, S-80727SN-DQ-X (Detection voltage : 2.635 to 2.765 V)
(Unless otherwise specified : Ta=25°C)
Test
Typ.
Max.
Unit
circuit
2.700
2.765
V
1
-V
DET
-V
DET
V
1
×0.05
×0.08
µA
1.0
3.0
2
15.0
V
1
0.50
mA
3
3.70
0.62
±0.34
mV/°C
Parameter
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Symbol
-V
DET
V
HYS
I
SS
V
DD
I
OUT
Conditions
Min.
2.635
-V
DET
×0.02
1.0
0.23
1.60
0.36
V
DD
= 4.5 V
Nch
V
DS
= 0.5 V
V
DD
= 1.2 V
Temperature
characteristic of -
V
DET
∆-V
DET
∆Ta
V
DD
= 2.4 V
Pch (CMOS V
DD
= 4.8 V
output)
V
DS
= 0.5 V
Ta=-30°C to 80°C
4
Seiko Instruments Inc.
11
SII [ SEIKO INSTRUMENTS INC ]
