Si3056
Si3018/19/10
Table 3. DC Characteristics, V
D
= 3.3 V
(V
D
=
3.0 to 3.6 V, T
A
=
0 to 70 °C)
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Power Supply Current, Digital
1
Total Supply Current, Sleep Mode
1
Total Supply Current, Deep Sleep
1,2
Symbol
V
IH
V
IL
V
OH
V
OL
I
L
I
D
I
D
I
D
Test Condition
Min
2.4
—
Typ
—
—
—
—
—
15
9
1
Max
—
0.8
—
0.35
10
—
—
—
Unit
V
V
V
V
µA
mA
mA
mA
I
O
= –2 mA
I
O
= 2 mA
V
D
pin
PDN = 1, PDL = 0
PDN = 1, PDL = 1
2.4
—
–10
—
—
—
Notes:
1.
All inputs at 0.4 or V
D
– 0.4 (CMOS levels). All inputs are held static except clock and all outputs unloaded
(Static I
OUT
=
0 mA).
2.
RGDT is not functional in this state.
Rev. 1.05
7
SILABS [ SILICON LABORATORIES ]
