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SI3230-KT 参数 Datasheet PDF下载

SI3230-KT图片预览
型号: SI3230-KT
PDF下载: 下载PDF文件 查看货源
内容描述: 通过来电/电池电压生成PROSLIC㈢可编程CMOS SLIC [PROSLIC㈢ PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION]
分类和应用: 电池
文件页数/大小: 108 页 / 1290 K
品牌: SILABS [ SILICON LABORATORIES ]
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Si3230
1. Electrical Specifications
Table 1. Absolute Maximum Ratings and Thermal Information
1
Parameter
DC Supply Voltage
Input Current, Digital Input Pins
Digital Input Voltage
ESD, Human Body Model
Operating Temperature Range
2
Storage Temperature Range
TSSOP-38 Thermal Resistance, Typical
QFN-38 Thermal Resistance, Typical
Continuous Power Dissipation
2
Si3201
DC Supply Voltage
Battery Supply Voltage
Input Voltage: TIP, RING, SRINGE, STIPE pins
Input Voltage: ITIPP, ITIPN, IRINGP, IRINGN pins
Operating Temperature Range
2
Storage Temperature Range
SOIC-16 Thermal Resistance, Typical
3
Continuous Power Dissipation
2
V
DD
V
BAT
V
INHV
V
IN
T
A
T
STG
θ
JA
P
D
–0.5 to 6.0
–104
(V
BAT
– 0.3) to (V
DD
+ 0.3)
–0.3 to (V
DD
+ 0.3)
–40 to 100
–40 to 150
55
1.0
V
V
V
V
C
C
C/W
W
T
A
T
STG
θ
JA
θ
JA
P
D
Symbol
Si3230
V
DDD
, V
DDA1
, V
DDA2
I
IN
V
IND
–0.5 to 6.0
±10
–0.3 to (V
DDD
+ 0.3)
2000
–40 to 100
–40 to 150
70
35
0.7
V
mA
V
V
C
C
C/W
C/W
W
Value
Unit
Notes:
1.
Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2.
Operation above 125
o
C junction temperature may degrade device reliability.
3.
Thermal resistance assumes a multi-layer PCB with the exposed pad soldered to a topside PCB pad.
4
Preliminary Rev. 0.96