Si3230
Table 4. Linefeed Characteristics (Continued)
(V
DDA
, V
DDD
= 3.13 to 5.25 V, T
A
= 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
Parameter
Trapezoidal Ring Crest
Factor Accuracy
Sinusoidal Ring Crest
Factor
Ringing Frequency Accuracy
Ringing Cadence Accuracy
Calibration Time
Power Alarm Threshold
Accuracy
Symbol
Test Condition
Crest factor = 1.3
Min
–.05
1.35
Typ
—
—
—
—
—
—
Max
.05
1.45
1
50
600
25
Unit
R
CF
f = 20 Hz
Accuracy of ON/OFF Times
↑CAL
to
↓CAL
Bit
At Power Threshold = 300 mW
–1
–50
—
–25
%
ms
ms
%
*Note:
DC resistance round trip; 160
Ω
corresponds to 2 kft 26 gauge AWG
.
Table 5. Monitor ADC Characteristics
(V
DDA
, V
DDD
= 3.13 to 5.25 V, T
A
= 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
Parameter
Differential Nonlinearity
(6-bit resolution)
Integral Nonlinearity
(6-bit resolution)
Gain Error (voltage)
Gain Error (current)
Symbol
DNLE
INLE
Test Condition
Min
–1/2
–1
—
—
Typ
—
—
—
—
Max
1/2
1
10
20
Unit
LSB
LSB
%
%
Table 6. Si3230 DC Characteristics, V
DDA
= V
DDD
= 5.0 V
(V
DDA
,V
DDD
= 4.75 V to 5.25 V, T
A
= 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
Min
0.7 x V
DDD
—
Typ
—
—
—
—
—
Max
—
0.3 x V
DD
D
Unit
V
V
V
V
V
DIO1,DIO2,SDITHRU:I
O
= –4 mA
V
DDD
– 0.6
SDO:I
O
= –8 mA
DOUT: I
O
= –40 mA
—
—
0.4
V
DDD
– 0.8
—
Low Level Output Voltage
V
OL
DIO1,DIO2,DOUT,SDITHRU:
I
O
= 4 mA
SDO,INT:I
O
= 8 mA
Input Leakage Current
I
L
–10
—
10
µA
8
Preliminary Rev. 0.96
SILABS [ SILICON LABORATORIES ]
