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SI3230-KT 参数 Datasheet PDF下载

SI3230-KT图片预览
型号: SI3230-KT
PDF下载: 下载PDF文件 查看货源
内容描述: 通过来电/电池电压生成PROSLIC㈢可编程CMOS SLIC [PROSLIC㈢ PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION]
分类和应用: 电池
文件页数/大小: 108 页 / 1290 K
品牌: SILABS [ SILICON LABORATORIES ]
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Si3230
9
8
7
6
Fundamental
Output Power
5
(dBm0)
Acceptable
Region
4
3
2.6
2
1
0
1
2
3
4
5
6
7
8
9
Fundamental Input Power (dBm0)
Figure 1. Overload Compression Performance
Table 4. Linefeed Characteristics
(V
DDA
, V
DDD
= 3.13 to 5.25 V, T
A
= 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
Parameter
Loop Resistance Range
DC Loop Current Accuracy
DC Open Circuit Voltage
Accuracy
DC Differential Output
Resistance
DC Open Circuit Voltage—
Ground Start
DC Output Resistance—
Ground Start
DC Output Resistance—
Ground Start
Loop Closure/Ring Ground
Detect Threshold Accuracy
Ring Trip Threshold
Accuracy
Ring Trip Response Time
Ring Amplitude
Ring DC Offset
Symbol
R
LOOP
Test Condition
See note.*
I
LIM
= 29 mA, ETBA = 4 mA
Active Mode; V
OC
= 48 V,
V
TIP
– V
RING
Min
0
–10
–4
–4
150
–20
–10
44
0
Typ
160
160
Max
160
10
4
4
20
10
Unit
%
V
V
kΩ
%
%
R
DO
V
OCTO
R
ROTO
R
TOTO
I
LOOP
< I
LIM
I
RING
<I
LIM
; V
RING
wrt ground
V
OC
= 48 V
I
RING
<I
LIM
; RING to ground
TIP to ground
I
THR
= 11.43 mA
I
THR
= 40.64 mA
User Programmable Register 70
and Indirect Register 36
V
TR
R
OS
5 REN load; sine wave;
R
LOOP
= 160
Ω,
V
BAT
= –75 V
Programmable in Indirect
Register 19
V
rms
V
Preliminary Rev. 0.96
7