Si823x
2. Electrical Specifications
Table 1. Electrical Characteristics
4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
Parameter
DC Specifications
Input-side Power Supply
Voltage
Driver Supply Voltage
Symbol
Test Conditions
Min
Typ
Max
Units
VDDI
Voltage between VDDA and
VDDA, VDDB GNDA, and VDDB and GNDB
(See “9. Ordering Guide” )
Si8230/32/33/35/36
IDDI(Q)
Si8231/34
IDDA(Q),
IDDB(Q)
IDDI
IDDO
IVIA, IVIB,
IPWM
IDISABLE
VIH
VIL
VI
HYST
VOAH,
VOBH
VOAL, VOBL
IOA(SCL),
IOB(SCL)
IOA(SCH),
IOB(SCH)
R
ON(SINK)
IOA, IOB = –1 mA
IOA, IOB = 1 mA
Si8230/1/2, Figure 4
Si8233/4/5/6, Figure 4
Si8230/1/2, Figure 5
Si8233/4/5/6, Figure 5
Si8230/1/2
Current per channel
PWM freq = 500 kHz
PWM freq = 500 kHz
4.5
—
5.5
V
6.5
—
—
—
—
—
–10
–10
2.0
—
400
(VDDA
/VDDB)
— 0.04
—
—
—
—
—
—
—
—
—
—
2
2
—
2.5
3.6
—
—
—
—
450
—
—
0.5
4.0
0.25
2.0
5.0
1.0
15
2.7
24
3
3
3.0
—
—
+10
+10
—
0.8
—
—
0.04
—
—
V
mA
mA
mA
mA
mA
µA dc
µA dc
V
V
mV
V
V
Input Supply Quiescent
Current
Output Supply Quiescent
Current
Input Supply Active Current
Output Supply Active Current
Input Pin Leakage Current
Input Pin Leakage Current
Logic High Input Threshold
Logic Low Input Threshold
Input Hysteresis
Logic High Output Voltage
Logic Low Output Voltage
Output Short-circuit Pulsed
Sink Current
Output Short-circuit Pulsed
Source Current
Output Sink Resistance
A
—
—
—
—
—
—
Si8233/4/5/6
Si8230/1/2
Output Source Resistance
R
ON(SOURCE)
Si8233/4/5/6
Notes:
1.
VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices.
2.
TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only).
3.
The largest RDT resistor that can be used is 220 k.
6
Rev. 0.3
SILABS [ SILICON LABORATORIES ]
