Si8610/20/21/22
Table 4. Electrical Characteristics
(V
DD1
= 2.5 V ±5%, V
DD2
= 2.5 V ±5%, T
A
= –40 to 125 ºC)
Parameter
VDD Undervoltage Threshold
VDD Undervoltage Threshold
VDD Negative-Going Lockout
Hysteresis
Positive-Going Input Threshold
Negative-Going Input Threshold
Input Hysteresis
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Output Impedance
Symbol
VDDUV+
VDDUV–
VDD
HYS
VT+
VT–
V
HYS
V
IH
V
IL
V
OH
V
OL
I
L
Z
O
Test Condition
V
DD1
, V
DD2
rising
V
DD1
, V
DD2
falling
Min
1.95
1.88
50
Typ
2.24
2.16
70
—
—
0.45
—
—
2.3
0.2
—
50
Max
2.375
2.325
95
1.9
1.4
0.50
—
0.8
—
0.4
±10
—
Unit
V
V
mV
V
V
V
V
V
V
V
µA
All inputs rising
All inputs falling
1.6
1.1
0.40
2.0
—
loh = –4 mA
lol = 4 mA
V
DD1
,V
DD2
– 0.4
—
—
—
DC Supply Current
(All inputs 0 V or at supply)
Si8610Bx, Ex
V
DD1
V
DD2
V
DD1
V
DD2
Si8620Bx, Ex
V
DD1
V
DD2
V
DD1
V
DD2
Si8621Bx, Ex
V
DD1
V
DD2
V
DD1
V
DD2
Si8622Bx, Ex
V
DD1
V
DD2
V
DD1
V
DD2
V
I
= 0(Bx), 1(Ex)
V
I
= 0(Bx), 1(Ex)
V
I
= 1(Bx), 0(Ex)
V
I
= 1(Bx), 0(Ex)
V
I
= 0(Bx), 1(Ex)
V
I
= 0(Bx), 1(Ex)
V
I
= 1(Bx), 0(Ex)
V
I
= 1(Bx), 0(Ex)
V
I
= 0(Bx), 1(Ex)
V
I
= 0(Bx), 1(Ex)
V
I
= 1(Bx), 0(Ex)
V
I
= 1(Bx), 0(Ex)
V
I
= 0(Bx), 1(Ex)
V
I
= 0(Bx), 1(Ex)
V
I
= 1(Bx), 0(Ex)
V
I
= 1(Bx), 0(Ex)
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.6
0.8
1.8
0.8
0.8
1.4
3.3
1.4
1.2
1.2
2.4
2.4
2.6
3.3
4.0
4.8
1.2
1.5
2.9
1.5
1.4
2.2
5.3
2.2
1.9
1.9
3.8
3.8
4.2
5.3
6.4
7.7
mA
mA
mA
mA
Notes:
1.
The nominal output impedance of an isolator driver channel is approximately 50
,
±40%, which is a
combination of the value of the on-chip series termination resistor and channel resistance of the output driver
FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately
terminated with controlled impedance PCB traces.
2.
t
PSK(P-P)
is the magnitude of the difference in propagation delay times measured between different units
operating at the same supply voltages, load, and ambient temperature.
3.
Start-up time is the time period from the application of power to valid data at the output.
Rev. 1.3
11
SILABS [ SILICON LABORATORIES ]
