Si8610/20/21/22
Table 7. IEC 60664-1 (VDE 0844 Part 2) Ratings
Specification
Test Conditions
Parameter
NB SOIC-8
WB SOIC-16
Basic Isolation Group
Material Group
I
I
Rated Mains Voltages < 150 V
Rated Mains Voltages < 300 V
Rated Mains Voltages < 400 V
Rated Mains Voltages < 600 V
I-IV
I-III
I-II
I-II
I-IV
I-IV
I-III
I-III
RMS
RMS
RMS
RMS
Installation Classification
Table 8. IEC 60747-5-2 Insulation Characteristics for Si86xxxx*
Characteristic
Symbol
Test Condition
Unit
Parameter
WB
NB
SOIC-16
SOIC-8
Maximum Working Insulation
Voltage
V
V
1200
2250
630
Vpeak
IORM
Method b1
(V
x 1.875 = V , 100%
IORM
PR
V
1182
Input to Output Test Voltage
PR
Production Test, t = 1 sec,
m
Partial Discharge < 5 pC)
t = 60 sec
6000
2
6000
2
Vpeak
Transient Overvoltage
IOTM
Pollution Degree
(DIN VDE 0110, Table 1)
Insulation Resistance at T ,
9
9
S
R
>10
>10
S
V
= 500 V
IO
*Note: Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of
40/125/21.
Table 9. IEC Safety Limiting Values1
Max
Parameter
Symbol
Test Condition
Min Typ
Unit
WB
NB
SOIC-16
SOIC-8
T
—
—
—
—
150
150
°C
Case Temperature
S
= 140 °C/W (NB SOIC-8),
100 °C (WB SOIC-16),
JA
Safety Input, Output,
or Supply Current
I
220
160
mA
S
V = 5.5 V, T = 150 °C, T = 25 °C
I
J
A
Device Power
Dissipation
P
—
—
150
150
mW
2
D
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 2 and 3.
2. The Si86xx is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square
wave.
Rev. 1.3
15
SILICON [ SILICON ]
