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U637256DC70G1 参数 Datasheet PDF下载

U637256DC70G1图片预览
型号: U637256DC70G1
PDF下载: 下载PDF文件 查看货源
内容描述: CapStore 32K ×8的nvSRAM [CapStore 32K x 8 nvSRAM]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 255 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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U637256  
C-Type  
K-Type  
DC Characteristics  
Symbol  
Conditions  
Unit  
Min. Max. Min. Max.  
VCC  
IOH  
IOL  
= 4.5 V  
=-4 mA  
= 8 mA  
Output High Voltage  
Output Low Voltage  
VOH  
VOL  
2.4  
8
2.4  
8
V
V
0.4  
-4  
0.4  
-4  
VCC  
VOH  
VOL  
= 4.5 V  
= 2.4 V  
= 0.4 V  
Output High Current  
Output Low Current  
IOH  
IOL  
mA  
mA  
Input Leakage Current  
VCC  
= 5.5 V  
High  
Low  
IIH  
IIL  
VIH  
VIL  
= 5.5 V  
1
1
μA  
μA  
=
0 V  
-1  
-1  
-1  
-1  
Output Leakage Current  
VCC  
= 5.5 V  
High at Three-State- Output  
Low at Three-State- Output  
IOHZ  
IOLZ  
VOH  
VOL  
= 5.5 V  
1
1
μA  
μA  
=
0 V  
SRAM Memory Operations  
Symbol  
Switching Characteristics  
No.  
Min.  
Max.  
Unit  
Read Cycle  
Alt.  
IEC  
1
2
3
4
5
6
7
8
9
Read Cycle Timef  
tAVAV  
tAVQV  
tELQV  
tGLQV  
tcR  
ta(A)  
ta(E)  
ta(G)  
tdis(E)  
tdis(G)  
ten(E)  
ten(G)  
tv(A)  
tPU  
70  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time to Data Validg  
Chip Enable Access Time to Data Valid  
Output Enable Access Time to Data Valid  
E HIGH to Output in High-Zh  
70  
70  
35  
25  
25  
tEHQZ  
tGHQZ  
tELQX  
G HIGH to Output in High-Zh  
E LOW to Output in Low-Z  
5
0
3
0
G LOW to Output in Low-Z  
tGLQX  
Output Hold Time after Address Change  
tAXQX  
10 Chip Enable to Power Activee  
tELICCH  
tEHICCL  
11 Chip Disable to Power Standbyd, e  
tPD  
70  
e: Parameter guaranteed but not tested.  
f: Device is continuously selected with E and G both Low.  
g: Address valid prior to or coincident with E transition LOW.  
h: Measured ± ±200 mV from steady state output voltage.  
Rev 1.1  
August 15, 2006  
STK Control #ML0054  
4