D A T A
S H E E T
DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Symbol
I
LI
I
LIT
I
LO
I
CC1
I
CC2
I
CC3
V
IL
V
IH
V
ID
V
OL
V
OH
V
LKO
Parameter Description
Input Load Current
A9 Input Load Current
Output Leakage Current
V
CC
Active Read Current
(Notes 1, 2)
V
CC
Active Write Current
(Notes 2, 3, 4)
V
CC
Standby Current
Input Low Voltage
Input High Voltage
Voltage for Autoselect and Sector
V
CC
= 5.0 V
Protect
Output Low Voltage
Output High Voltage
Low V
CC
Lock-out Voltage
I
OL
= 12 mA, V
CC
= V
CC
Min
I
OH
= –2.5 mA, V
CC
= V
CC
Min
2.4
3.2
4.2
Test Description
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max
V
CC
= V
CC
Max, A9 = 12.5 V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max
CE# = V
IL,
OE# = V
IH
CE# = V
IL,
OE# = V
IH
CE# and OE# = V
IH
–0.5
2.0
10.5
12
30
0.4
Min
Typ
Max
±1.0
50
±1.0
30
40
1.0
0.8
V
CC
+ 0.5
12.5
0.45
Unit
µA
µA
µA
mA
mA
mA
V
V
V
V
V
V
Notes:
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
=V
CC
max.
3. I
CC
active while Embedded Program or Embedded Erase Algorithm is in progress.
4. Not 100% tested.
18
Am29F010B
Am29F010B_00_C7 October 31, 2006
SPANSION [ SPANSION ]
