D a t a
S h e e t
DC Characteristics
CMOS Compatible
Parameter
I
LI
I
LIT
I
LR
Description
Input Load Current
A9 Input Load Current
Reset Leakage Current
Output Leakage Current
Test Conditions
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC max
V
CC
= V
CC max
; A9 = 12.5 V
V
CC
= V
CC max
; RESET# = 12.5 V
Min
Typ
Max
±1.0
35
35
±1.0
Unit
µA
µA
µA
I
LO
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
10 MHz
CE# = V
IL,
OE#
=
V
IH,
Byte Mode
5 MHz
1 MHz
35
15
2.5
35
15
2.5
40
0.4
0.8
0.4
-0.5
0.7 V
CC
V
CC
= 3.3 V
I
OL
= 4.0 mA, V
CC
= V
CC min
I
OH
= -2.0 mA, V
CC
= V
CC min
I
OH
= -100 µA, V
CC
= V
CC min
0.85 x V
CC
V
CC
–0.4
2.3
11.5
µA
50
20
10
50
20
10
60
5
5
5
0.6
V
CC
+ 0.5
12.5
0.45
mA
µA
µA
µA
V
V
V
V
V
mA
I
CC1
V
CC
Active Read Current
(Notes 1, 2)
10 MHz
CE# = V
IL,
OE#
=
V
IH,
Word Mode
5 MHz
1 MHz
I
CC2
I
CC3
I
CC4
I
CC5
V
IL
V
IH
V
ID
V
OL
V
OH1
V
OH2
V
LKO
V
CC
Active Write Current
(Notes 2, 3, 5)
CE# = V
IL,
OE# = V
IH
V
CC
Standby Current (Notes 2, 4) CE#, RESET# = V
CC
±
0.3 V
V
CC
Standby Current During Reset
RESET# = V
SS
±
0.3 V
(Notes 2, 4)
Automatic Sleep Mode
(Notes 2, 4, 6)
Input Low Voltage (Notes 6, 7)
Input High Voltage (Notes 6, 7)
Voltage for Autoselect and
Temporary Sector Unprotect
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage (Note 4)
V
IH
= V
CC
±
0.3 V;
-0.1 < V
IL
≤
0.3 V
2.5
V
Notes:
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
. Typical V
CC
is 3.0 V.
2. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. At extended temperature range (>+85°C), typical current is 5 µA and maximum current is 10 µA.
5. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns.
6. Not 100% tested.
7. V
CC
voltage requirements.
October 11, 2006 S29AL016M_00_A7
S29AL016M
41