欢迎访问ic37.com |
会员登录 免费注册
发布采购

S29GL512P11TAI010 参数 Datasheet PDF下载

S29GL512P11TAI010图片预览
型号: S29GL512P11TAI010
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 71 页 / 1568 K
品牌: SPANSION [ SPANSION ]
 浏览型号S29GL512P11TAI010的Datasheet PDF文件第48页浏览型号S29GL512P11TAI010的Datasheet PDF文件第49页浏览型号S29GL512P11TAI010的Datasheet PDF文件第50页浏览型号S29GL512P11TAI010的Datasheet PDF文件第51页浏览型号S29GL512P11TAI010的Datasheet PDF文件第53页浏览型号S29GL512P11TAI010的Datasheet PDF文件第54页浏览型号S29GL512P11TAI010的Datasheet PDF文件第55页浏览型号S29GL512P11TAI010的Datasheet PDF文件第56页  
Data
Sheet
(Advan ce
Infor m a tio n)
11.6
Parameter
Symbol
I
LI
I
LIT
I
LO
I
CC1
I
IO2
I
CC2
I
CC3
DC Characteristics
Table 11.2
S29GL-P DC Characteristics (CMOS Compatible)
Parameter Description
(Notes)
Input Load Current
A9 Input Load Current
Output Leakage Current
Test Conditions
V
IN
= V
SS
to V
CC
V
CC
= V
CC max
V
CC
= V
CC max
; A9 = 12.5 V
V
OUT
= V
SS
to V
CC ,
V
CC
= V
CC max
CE# = V
IL
, OE# = V
IH
, V
CC
= V
CCmax
,
f
= 1 MHz
V
CC
Active Read Current
V
IO
Non-Active Output
V
CC
Intra-Page Read Current
V
CC
Active Erase/
Program Current (2,
V
CC
Standby Current
CE# = V
IL
, OE# = V
IH
, V
CC
= V
CCmax
,
f
= 5 MHz
CE# = V
IL
, OE# = V
IH
, V
CC
= V
CCmax
,
f
= 10 MHz
CE# = V
IL,
OE# = V
IH
CE# = V
IL,
OE# = V
IH,
V
CC
= V
CCmax
,
f
= 10 MHz
CE# = V
IL
, OE# = V
IH
, V
CC
= V
CCmax
,
f
= 33 MHz
CE# = V
IL,
OE# = V
IH,
V
CC
= V
CCmax
CE#, RESET# = V
CC
± 0.3 V,
OE# = V
IH,
V
CC
= V
CCmax
V
IL
= V
SS
+ 0.3 V/-0.1V,
V
CC
= V
CCmax;
V
IL
= V
SS
+ 0.3 V/-0.1V,
RESET# = V
SS
± 0.3 V
V
CC
= V
CCmax
, V
IH
= V
CC
± 0.3 V,
V
IL
= V
SS
+ 0.3 V/-0.1V, WP#/ACC = V
IH
CE# = V
IL,
OE# = V
IH,
V
CC
= V
CCmax,
WP#/ACC = V
HH
WP#/ACC
pin
V
CC
pin
–0.1
0.7 x V
IO
11.5
11.5
6
30
60
0.2
1
5
50
WP/ACC
Others
Min
Typ
Max
±2.0
±1.0
35
±1.0
20
50
100
10
10
20
90
mA
mA
mA
mA
µA
µA
Unit
µA
I
CC4
1
5
µA
I
CC5
I
CC6
V
CC
Reset Current
Automatic Sleep Mode
ACC Accelerated
Program Current
Input Low Voltage
Input High Voltage
250
1
10
50
500
5
20
80
0.3 x V
IO
V
IO
+ 0.3
12.5
12.5
0.15 x V
IO
µA
µA
I
ACC
V
IL
V
IH
V
HH
V
ID
V
OL
V
OH
V
LKO
mA
V
V
V
V
V
V
Voltage for Program Acceleration V
CC
= 2.7 –3.6 V
Voltage for Autoselect and
Temporary Sector Unprotect
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage
V
CC
= 2.7 –3.6 V
I
OL
= 100 µA
I
OH
= -100 µA
0.85 x V
IO
2.3
2.5
V
Notes
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.
3. Not 100% tested.
4. Automatic sleep mode enables the lower power mode when addresses remain stable tor t
ACC
+ 30 ns.
5. V
IO
= 1.65–3.6 V
6. V
CC
= 3 V and V
IO
= 3V or 1.8V. When V
IO
is at 1.8V, I/O pins cannot operate at 3V.
50
S29GL-P MirrorBit
TM
Flash Family
S29GL-P_00_A3 November 21, 2006