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S29GL032A11FFIR40 参数 Datasheet PDF下载

S29GL032A11FFIR40图片预览
型号: S29GL032A11FFIR40
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位32MEGABIT 3.0 BOLT单页面模式闪存 [64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 88 页 / 1198 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e
I n f o r m a t i o n
START
Read DQ15–DQ0
Addr = VA
DQ7 = Data?
Yes
No
No
DQ5 = 1?
Yes
Read DQ15–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector
being erased. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
Figure 7.
Data# Polling Algorithm
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an
Embedded Algorithm is in progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command sequence. Since RY/BY#
is an open-drain output, several RY/BY# pins can be tied together in parallel with
a pull-up resistor to V
CC
.
If the output is low (Busy), the device is actively erasing or programming. (This
includes programming in the Erase Suspend mode.) If the output is high (Ready),
the device is in the read mode, the standby mode, or in the erase-suspend-read
mode.
shows the outputs for RY/BY#.
58
S29GLxxxA MirrorBit™ Flash Family
S29GLxxxA_00_A2 January 28, 2005