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S29GL064N90TFI060 参数 Datasheet PDF下载

S29GL064N90TFI060图片预览
型号: S29GL064N90TFI060
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆, 32兆3.0伏只页面模式闪存设有110纳米的MirrorBit工艺技术 [64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 79 页 / 3123 K
品牌: SPANSION [ SPANSION ]
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D at a
S hee t
13. DC Characteristics
Table 13.1
DC Characteristics, CMOS Compatible
Parameter
Symbol
I
LI
I
LIT
I
LO
Parameter Description (Notes)
Input Load Current
A9 Input Load Current
Output Leakage Current
Test Conditions
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC max
V
CC
= V
CC max
; A9 = 12.5 V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC max
CE# = V
IL,
OE# = V
IH
, V
CC
= V
CC max,
f = 1 MH
I
CC1
V
CC
Initial Read Current
CE# = V
IL,
OE# = V
IH
, V
CC
= V
CC max,
f = 5 MHz
CE# = V
IL,
OE# = V
IH
, V
CC
= V
CC max,
f = 10 MHz
CE# = V
IL,
OE# = V
IH
, V
CC
= V
CC max
f = 10 MHz
CE# = V
IL,
OE# = V
IH
, V
CC
= V
CC max
f = 33 MH
CE# = V
IL,
OE# = V
IH
, V
CC
= V
CC max
V
CC
= V
CC max
; V
IO
= V
CC
; OE# = V
IH
;
V
IL
= (V
SS
+0.3V) / –0.1V;
CE#, RESET# = V
CC
±
0.3 V
V
CC
= V
CCmax
, V
IO
= V
CC
,
V
IL
= (V
SS
+0.3V) / –0.1V;
RESET# = V
SS
±
0.3 V
V
CC
= V
CCmax
, V
IO
= V
CC
,
V
IH
= V
CC
±
0.3 V;
V
IL
= (V
SS
+0.3V) / –0.1V;
WP#/ACC = V
IH
CE# = V
IL
, OE# = V
IH
,
V
CC
= V
CC
max,
WP#/ACC = V
IH
WP#/
ACC
V
CC
–0.1
0.7 V
IO
V
CC
= 2.7 –3.6 V
V
CC
= 2.7 –3.6 V
I
OL
= 100 µA
I
OH
= –100 µA
0.85
V
IO
2.3
2.5
11.5
11.5
6
25
45
1
5
50
Min
Typ
Max
#WP/ACC: ±2.0 µA
Others: ±1.0 µA
35
±1.0
10
30
50
10
mA
20
60
mA
mA
Unit
µA
µA
µA
I
CC2
V
CC
Intra-Page Read Current
I
CC3
I
CC4
V
CC
Active Erase/Program Current
(Notes
V
CC
Standby Current
1
5
µA
I
CC5
V
CC
Reset Current
1
5
µA
I
CC6
Automatic Sleep Mode
1
5
µA
I
ACC
V
IL
V
IH
V
HH
V
ID
V
OL
V
OH1
V
OH2
V
LKO
ACC Accelerated Program Current
Input Low Voltage 1
Input High Voltage 1
Voltage for ACC Erase/Program
Acceleration
Voltage for Autoselect
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage
10
50
20
60
0.3 x V
IO
V
IO
+ 0.3
12.5
12.5
0.15 x V
IO
mA
mA
V
V
V
V
V
V
V
Notes
1. I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Erase, Embedded Program, or Write Buffer Programming is in progress.
3. Not 100% tested.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns.
5. V
IO
= 1.65–1.95 V or 2.7–3.6 V.
6. V
CC
= 3 V and V
IO
= 3 V or 1.8 V. When V
IO
is at 1.8 V, I/Os cannot operate at 3 V.
62
S29GL-N MirrorBit
®
Flash Family
S29GL-N_01_09 November 16, 2007