D a t a S h e e t
Table 15.4 Alternate CE# Controlled Erase and Program Operations
Parameter
Speed Options
JEDEC
tAVAV
Std.
tWC
tAS
Description
90
110
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle Time (Note 1)
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Min
90
110
tAVWL
tELAX
tDVEH
tEHDX
tGHEL
tWLEL
tEHWH
tELEH
tEHEL
Address Setup Time
0
45
45
0
tAH
Address Hold Time
tDS
Data Setup Time
tDH
Data Hold Time
tGHEL
tWS
tWH
tCP
Read Recovery Time Before Write (OE# High to WE# Low)
WE# Setup Time
0
0
WE# Hold Time
0
CE# Pulse Width
35
30
240
60
54
0.5
50
tCPH
CE# Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Single Word Program Operation (Note 2)
Accelerated Single Word Program Operation (Note 2)
Sector Erase Operation (Note 2)
RESET# High Time Before Write
tWHWH1
tWHWH1
µs
tWHWH2
tWHWH2
tRH
sec
ns
Notes
1. Not 100% tested.
2. See the Erase And Programming Performance on page 73 for more information.
3. For 1–16 words/1–32 bytes programmed.
4. If a program suspend command is issued within t
, the device requires t
before reading status data, once programming resumes (that is, the program
POLL
POLL
resume command is written). If the suspend command was issued after t
on page 72.
, status data is available immediately after programming resumes. See Figure 15.11
POLL
November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit® Flash Family
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