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S29GL064N90TFI030 参数 Datasheet PDF下载

S29GL064N90TFI030图片预览
型号: S29GL064N90TFI030
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆, 32兆3.0伏只页面模式闪存设有110纳米的MirrorBit工艺技术 [64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 79 页 / 3123 K
品牌: SPANSION [ SPANSION ]
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D at a
S hee t
Figure 15.11
Alternate CE# Controlled Write (Erase/Program) Operation Timings
PBA for program
2AA for erase
SA for program buffer to flash
SA for sector erase
555 for chip erase
Data# Polling
PA
Addresses
t
WC
t
WH
WE#
t
GHEL
OE#
t
CP
CE#
t
WS
t
CPH
t
DS
t
DH
Data
t
RH
PBD for program
55 for erase
29 for program buffer to flash
30 for sector erase
10 for chip erase
t
AS
t
AH
t
WHWH1 or 2
t
BUSY
DQ7#
D
OUT
RESET#
RY/BY#
Notes
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT
is the data written to the device.
4. Illustration shows device in word mode.
72
S29GL-N MirrorBit
®
Flash Family
S29GL-N_01_09 November 16, 2007