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S29GL512N10FAI010 参数 Datasheet PDF下载

S29GL512N10FAI010图片预览
型号: S29GL512N10FAI010
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存内存集成电路
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a
S h e e t
DC Characteristics
CMOS Compatible
Parameter
Symbol
I
LI
I
LIT
I
LO
Parameter Description
(Notes)
Input Load Current (1)
A9 Input Load Current
Output Leakage Current
Test Conditions
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC max
V
CC
= V
CC max
; A9 = 12.5 V
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
CE# = V
IL
; OE# = V
IH
, V
CC
= V
CCmax
;
f
= 1 MHz, Byte Mode
I
CC1
V
CC
Active Read Current (1)
CE# = V
IL
; OE# = V
IH
, V
CC
= V
CCmax
;
f
= 5 MHz, Word Mode
CE# = V
IL
; OE# = V
IH
, V
CC
= V
CCmax
;
f = 10 MHz
CE# = V
IL
; OE# = V
IH,
V
CC
= V
CCmax
;
f = 10 MHz
CE# = V
IL
, OE# = V
IH
, V
CC
= V
CCmax
;
f=33 MHz
6
30
60
1
5
50
1
Min
Typ
Max
WP/ACC: ±2.0
Others: ±1.0
35
±1.0
20
50
90
10
mA
20
90
5
mA
µA
mA
Unit
µA
µA
µA
I
CC2
V
CC
Intra-Page Read Current (1)
I
CC3
I
CC4
V
CC
Active Erase/Program Current (2,
CE# = V
IL,
OE# = V
IH,
V
CC
= V
CCmax
V
CC
Standby Current
V
CC
= V
CCmax
; V
IO
= V
CC
; OE# = V
IH
;
V
IL
= V
SS
+ 0.3 V / –0.1 V;
CE#, RESET# = V
CC
± 0.3 V
V
CC
= V
CCmax
; V
IO
= V
CC
;
V
IL
= V
SS
+ 0.3 V / –0.1 V;
RESET# = V
SS
± 0.3 V
V
CC
= V
CCmax
; V
IO
= V
CC
;
V
IH
= V
CC
± 0.3 V;
V
IL
= V
SS
+ 0.3 V / –0.1 V;
WP#/A
CC
= V
IH
CE# = V
IL,
OE# = V
IH,
V
CC
= V
CCmax,
WP#/ACC = V
IH
WP#/ACC
pin
V
CC
pin
–0.1
0.7 x V
IO
V
CC
= 2.7–3.6 V
V
CC
= 2.7–3.6 V
I
OL
= 100 µA
I
OH
= -100 µA
0.85 x V
IO
2.3
11.5
11.5
I
CC5
V
CC
Reset Current
1
5
µA
I
CC6
Automatic Sleep Mode (4)
1
5
µA
I
ACC
ACC Accelerated Program Current
10
50
20
90
0.3 x V
IO
V
IO
+ 0.3
12.5
12.5
0.15 x V
IO
mA
V
IL
V
IH
V
HH
V
ID
V
OL
V
OH
V
LKO
Input Low Voltage (5)
Input High Voltage (5)
Voltage for ACC Erase/Program
Acceleration
Voltage for Autoselect and Temporary
Sector Unprotect
Output Low Voltage (5)
Output High Voltage (5)
Low V
CC
Lock-Out Voltage (3)
V
V
V
V
V
V
2.5
V
Notes:
1.
2.
3.
4.
5.
6.
The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
I
CC
active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.
Not 100% tested.
Automatic sleep mode enables the lower power mode when addresses remain stable tor t
ACC
+ 30 ns.
V
IO
= 1.65–1.95 V or 2.7–3.6 V
V
CC
= 3 V and V
IO
= 3V or 1.8V. When V
IO
is at 1.8V, I/O pins cannot operate at 3V.
74
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006