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S29GL512N10FAI010 参数 Datasheet PDF下载

S29GL512N10FAI010图片预览
型号: S29GL512N10FAI010
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存内存集成电路
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a
S h e e t
AC Characteristics
Read-Only Operations
Parameter
JEDEC
Std.
Description
Test Setup
Speed Options
90
Min
90
100
100
110
110
110
90
100
110
110
90
100
110
110
25
25
25
25
20
20
0
0
10
35
25
35
30
35
110
Unit
t
AVAV
t
RC
Read Cycle Time
V
IO
= V
CC
= 3 V
V
IO
= 1.8 V, V
CC
= 3 V
V
IO
= V
CC
= 3 V
V
IO
= 1.8 V, V
CC
= 3 V
V
IO
= V
CC
= 3 V
V
IO
= 1.8 V, V
CC
= 3 V
ns
t
AVQV
t
ACC
Address to Output Delay
Max
ns
t
ELQV
t
CE
t
PACC
Chip Enable to Output Delay
Page Access Time
Output Enable to Output Delay
Chip Enable to Output High Z
Output Enable to Output High Z
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First
Output Enable Hold Time
Read
Toggle and
Data# Polling
Read
Max
Max
Max
Max
Max
Min
Min
Min
Min
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
OE
t
DF
t
DF
t
OH
t
OEH
t
CEH
Chip Enable Hold Time
Notes:
1.
2.
3.
4.
5.
6.
Not 100% tested.
CE#, OE# = V
IL
OE# = V
IL
See
and
for test specifications.
Unless otherwise indicated, AC specifications for 90 ns, 100 ns, and 110 ns speed options are tested with V
IO
= V
CC
= 3 V. AC specifications
for 110 ns speed options are tested with V
IO
= 1.8 V and V
CC
= 3.0 V.
90 ns speed option only applicable to S29GL128N and S29GL256N.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
77