SSM4502GM
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-6A
V
GS
=-4.5V, I
D
=-5A
V
GS
=-2.5V, I
D
=-4A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
Min.
-20
-
-
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
2.2
-
-
-
13
1.5
4.5
8
17
24
36
920
90
85
Max. Units
-
40
45
80
-
-
-1
-25
±100
-
-
-
-
-
-
-
-
-
-
V
mΩ
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-2.2A
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
=±12V
I
D
=-5A
V
DS
=-16V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-5V
R
D
=10Ω
V
GS
=0V
V
DS
=-20V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SOURCE-DRAIN DIODE
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-1.8A, V
GS
=0V
I
S
=-5A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
28
16
Max.
-1.2
-
-
30
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
02/13/2008 Rev.1.00
www.SiliconStandard.com
3
SSC [ SILICON STANDARD CORP. ]
