SSM9926GEO
N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance
Capable of 2.5V gate drive
Low drive current
Surface-mount package
D2
S2
G2
S2
BV
DSS
R
DS(ON)
S1
D1
G1
S1
20V
28mΩ
4.6A
TSSOP-8
I
D
Description
Power MOSFETs from
Silicon Standard
provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
G1
G2
D2
S1
S2
RoHS compliant.
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
=25°C
I
D
@ T
A
=70°C
I
DM
P
D
@ T
A
=25°C
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
± 12
4.6
3.7
20
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Max.
Value
125
Unit
°C/W
Rev.2.10 1/29/2005
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