SSM9926GEO
25
20
15
10
5
24
18
12
6
4.5V
4.0V
3.5V
3.0V
T C =25 o C
4.5V
4.0V
3.5V
3.0V
T C =150 o C
2.5V
2.5V
V
GS =2.0V
V
GS =2.0V
0
0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
45
1.8
I D = 4A
T C =25 o C
I D = 4A
V GS =4.5V
1.6
1.4
1.2
1.0
0.8
0.6
40
35
30
25
20
Ω
Ω
Ω
Ω
1
2
3
4
5
6
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
Rev.2.10 1/29/2005
www.SiliconStandard.com
3 of 6