256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash
SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
on V
PP
pin, V
DD
= 5V (±5%), V
IL
on CE# pin, and
V
IH
on
OE# pin. The programming mode for SST27SF512 is acti-
vated by asserting 12V (±5%) on OE#/V
PP
pin, V
DD
= 5V
(±5%), and V
IL
on CE# pin. These devices are pro-
grammed byte-by-byte with the desired data at the desired
address using a single pulse (CE# pin low for
SST27SF256/512 and PGM# pin low for SST27SF010/
020) of 20 µs. Using the MTP programming algorithm, the
Byte-Programming process continues byte-by-byte until
the entire chip has been programmed.
Product Identification Mode
The Product Identification mode identifies the devices as
the SST27SF256, SST27SF512, SST27SF010 and
SST27SF020 and manufacturer as SST. This mode may
be accessed by the hardware method. To activate this
mode for SST27SF256/010/020, the programming equip-
ment must force V
H
(12V±5%) on address A
9
with V
PP
pin
at V
DD
(5V±10%) or V
SS
. To activate this mode for
SST27SF512, the programming equipment must force V
H
(12V±5%) on address A
9
with OE#/V
PP
pin at V
IL
. Two
identifier bytes may then be sequenced from the device
outputs by toggling address line A
0
. For details, see Tables
3, 4, and 5 for hardware operation.
TABLE 1: P
RODUCT
I
DENTIFICATION
Address
Manufacturer’s ID
Device ID
SST27SF256
SST27SF512
SST27SF010
SST27SF020
0001H
0001H
0001H
0001H
A3H
A4H
A5H
A6H
T1.1 502
Chip-Erase Operation
The only way to change a data from a “0” to “1” is by electri-
cal erase that changes every bit in the device to “1”. Unlike
traditional EPROMs, which use UV light to do the Chip-
Erase, the SST27SF256/512/010/020 uses an electrical
Chip-Erase operation. This saves a significant amount of
time (about 30 minutes for each Erase operation). The
entire chip can be erased in a single pulse of 100 ms (CE#
pin low for SST27SF256/512 and PGM# pin for
SST27SF010/020). In order to activate the Erase mode for
SST27SF256/010/020, the 12V (±5%) is applied to V
PP
and A
9
pins, V
DD
= 5V (±5%), V
IL
on CE# pin, and
V
IH
on
OE# pin. In order to activate Erase mode for SST27SF512,
the 12V (±5%) is applied to OE#/V
PP
and A
9
pins, V
DD
=
5V (±5%), and V
IL
on CE# pin. All other address and data
pins are “don’t care”. The falling edge of CE# (PGM# for
SST27SF010/020) will start the Chip-Erase operation.
Once the chip has been erased, all bytes must be verified
for FFH. Refer to Figures 13, 14, and 15 for the flowcharts.
Data
BFH
0000H
©2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
2
SST [ SILICON STORAGE TECHNOLOGY, INC ]
