256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit Multi-Purpose Flash
SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to V
DD
+1.0V
Voltage on A
9
and V
PP
Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 14.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Through Hold Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
O
PERATING
R
ANGE
Range
Commercial
Ambient Temp
0°C to +70°C
V
DD
5.0V±10%
V
PP
12V±5%
AC C
ONDITIONS OF
T
EST
Input Rise/Fall Time . . . . . . . . . . . 10 ns
Output Load . . . . . . . . . . . . . . . . . C
L
= 100 pF for 90 ns
Output Load . . . . . . . . . . . . . . . . . C
L
= 30 pF for 70 ns
See Figures 11 and 12
TABLE 6: R
EAD
M
ODE
DC O
PERATING
C
HARACTERISTICS FOR
SST27SF256/512/010/020
V
DD
= 5.0V±10%, V
PP
=V
DD
OR
V
SS
(Ta = 0°C to +70°C (Commercial))
Limits
Symbol
I
DD
Parameter
V
DD
Read Current
30
I
PPR
V
PP
Read Current
100
I
SB1
I
SB2
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
I
H
Standby V
DD
Current
(TTL input)
Standby V
DD
Current
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Supervoltage Current for A
9
2.4
100
2.0
3
100
1
10
0.8
V
DD
+0.5
0.2
µA
mA
µA
µA
µA
V
V
V
V
µA
mA
Min
Max
Units
Test Conditions
Address input=V
IL
/V
IH
at f=1/T
RC
Min
V
DD
=V
DD
Max
CE#=OE#=V
IL
, all I/Os open
Address input=V
IL
/V
IH
at f=1/T
RC
Min
V
DD
=V
DD
Max, V
PP
=V
DD
CE#=OE#=V
IL
, all I/Os open
CE#=V
IH
, V
DD
=V
DD
Max
CE#=V
DD
-0.3
V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
I
OL
=2.1 mA, V
DD
=V
DD
Min
I
OH
=-400 µA, V
DD
=V
DD
Min
CE#=OE#=V
IL
, A
9
=V
H
Max
T6.3 502
©2001 Silicon Storage Technology, Inc.
S71152-02-000 5/01
502
8
SST [ SILICON STORAGE TECHNOLOGY, INC ]
