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SST29VE010-200-3C-EH 参数 Datasheet PDF下载

SST29VE010-200-3C-EH图片预览
型号: SST29VE010-200-3C-EH
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8 )页面模式的EEPROM [1 Megabit (128K x 8) Page Mode EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 27 页 / 883 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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1 Megabit Page Mode EEPROM
SST29EE010, SST29LE010, SST29VE010
T
ABLE
5: 29EE010 DC O
PERATING
C
HARACTERISTICS
V
CC
= 5V±10%
Symbol Parameter
I
CC
Power Supply Current
Read
Write
Standby V
CC
Current
(TTL input)
Standby V
CC
Current
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Supervoltage for A
9
Supervoltage Current
for A
9
Min
Limits
Max
30
50
3
50
1
10
0.8
2.0
0.4
2.4
11.6
12.4
100
Units
mA
mA
mA
µA
µA
µA
V
V
V
V
V
µA
Test Conditions
CE#=OE#=V
IL,
WE#=V
IH
, all I/Os open,
Address input = V
IL
/V
IH
, at f=1/T
RC
Min.,
V
CC
=V
CC
Max
CE#=WE#=V
IL,
OE#=V
IH,
V
CC
=V
CC
Max.
CE#=OE#=WE#=V
IH,
V
CC
=V
CC
Max.
CE#=OE#=WE#=V
CC
-0.3V.
V
CC
= V
CC
Max.
V
IN
=GND to V
CC
, V
CC
= V
CC
Max.
V
OUT
=GND to V
CC
, V
CC
= V
CC
Max.
V
CC
= V
CC
Max.
V
CC
= V
CC
Max.
I
OL
= 2.1 mA, V
CC
= V
CC
Min.
I
OH
= -400µA, V
CC
= V
CC
Min.
CE# = OE# =V
IL
, WE# = V
IH
CE# = OE# = V
IL
, WE# = V
IH
,
A
9
= V
H
Max.
304 PGM T5.0
I
SB1
I
SB2
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
V
H
I
H
T
ABLE
6: 29LE010/29VE010 DC O
PERATING
C
HARACTERISTICS
V
CC
= 3.0-3.6
FOR
29LE010, V
CC
= 2.7-3.6
FOR
29VE010
Limits
Symbol Parameter
Min
Max
Units
Test Conditions
I
CC
Power Supply Current
CE#=OE#=V
IL,
WE#=V
IH
, all I/Os open,
Read
12
mA
Address input = V
IL
/V
IH
, at f=1/T
RC
Min.,
V
CC
=V
CC
Max
Write
15
mA
CE#=WE#=V
IL,
OE#=V
IH,
V
CC
=V
CC
Max.
I
SB1
Standby V
CC
Current
1
mA
CE#=OE#=WE#=V
IH,
V
CC
=V
CC
Max.
(TTL input)
I
SB2
Standby V
CC
Current
15
µA
CE#=OE#=WE#=V
CC
-0.3V.
(CMOS input)
V
CC
= V
CC
Max.
I
LI
Input Leakage Current
1
µA
V
IN
=GND to V
CC
, V
CC
= V
CC
Max.
I
LO
Output Leakage Current
10
µA
V
OUT
=GND to V
CC
, V
CC
= V
CC
Max.
V
IL
Input Low Voltage
0.8
V
V
CC
= V
CC
Max.
V
IH
Input High Voltage
2.0
V
V
CC
= V
CC
Max.
V
OL
Output Low Voltage
0.4
V
I
OL
= 100 µA, V
CC
= V
CC
Min.
V
OH
Output High Voltage
2.4
V
I
OH
= -100 µA, V
CC
= V
CC
Min.
Supervoltage for A
9
11.6
12.4
V
CE# = OE# =V
IL
, WE# = V
IH
V
H
I
H
Supervoltage Current
100
µA
CE# = OE# = V
IL
, WE# = V
IH
,
for A
9
A
9
= V
H
Max.
304 PGM T6.0
© 1998 Silicon Storage Technology, Inc.
8
304-04 12/97