1 Megabit Page Mode EEPROM
SST29EE010, SST29LE010, SST29VE010
T
ABLE
7: P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ(1)
T
PU-WRITE(1)
Parameter
Power-up to Read Operation
Power-up to Write Operation
Maximum
100
5
Units
µs
ms
304 PGM T7.0
1
2
3
304 PGM T8.0
T
ABLE
8: C
APACITANCE
(T
a
= 25 °C, f=1 MHz, other pins open)
Parameter
C
I/O(1)
C
IN(1)
Note:
(1)
This
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O =
0V
V
IN =
0V
Maximum
12 pF
6 pF
4
5
parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T
ABLE
9: R
ELIABILITY
C
HARACTERISTICS
Symbol
Parameter
N
END
T
DR(1)
V
ZAP_HBM(1)
V
ZAP_MM(1)
I
LTH(1)
Note:
(1)
This
(2)
See
Minimum Specification
10,000
(2)
100
1000
200
100
Units
Cycles
Years
Volts
Volts
mA
Test Method
MIL-STD-883, Method 1033
JEDEC Standard A103
JEDEC Standard A114
JEDEC Standard A115
JEDEC Standard 78
304 PGM T9.1
6
7
8
9
10
11
12
13
14
15
16
Endurance
Data Retention
ESD Susceptibility
Human Body Model
ESD Susceptibility
Machine Model
Latch Up
parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Ordering Information for desired type.
© 1998 Silicon Storage Technology, Inc.
9
304-04 12/97
SST [ SILICON STORAGE TECHNOLOGY, INC ]
