512 Kbit Page-Mode EEPROM
SST29EE512 / SST29LE512 / SST29VE512
Data Sheet
TABLE 5: DC O
PERATING
C
HARACTERISTICS
V
DD
= 5.0V±10%
FOR
SST29EE512
Limits
Symbol
I
DD
Parameter
Power Supply Current
Read
Write
I
SB1
I
SB2
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
Standby V
DD
Current
(TTL input)
Standby V
DD
Current
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
2.4
2.0
0.4
30
50
3
50
1
10
0.8
mA
mA
mA
µA
µA
µA
V
V
V
V
Min
Max
Units
Test Conditions
Address input=V
IL
/V
IH
, at f=1/T
RC
Min,
V
DD
=V
DD
Max
CE#=OE#=V
IL
, WE#=V
IH
, all I/Os open
CE#=WE#=V
IL
, OE#=V
IH
, V
DD
=V
DD
Max
CE#=OE#=WE#=V
IH
, V
DD
=V
DD
Max
CE#=OE#=WE#=V
DD
-0.3V, V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
I
OL
=2.1 mA, V
DD
=V
DD
Min
I
OH
=-400 µA, V
DD
=V
DD
Min
T5.1 301
TABLE 6: DC O
PERATING
C
HARACTERISTICS
V
DD
= 3.0-3.6V
FOR
SST29LE512
AND
2.7-3.0V
FOR
SST29VE512
Limits
Symbol
I
DD
Parameter
Power Supply Current
Read
Write
I
SB1
I
SB2
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
Standby V
DD
Current
(TTL input)
Standby V
DD
Current
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
2.4
2.0
0.4
12
15
1
15
1
10
0.8
mA
mA
mA
µA
µA
µA
V
V
V
V
Min
Max
Units
Test Conditions
Address input=V
IL
/V
IH
, at f=1/T
RC
Min,
V
DD
=V
DD
Max
CE#=OE#=V
IL
, WE#=V
IH
, all I/Os open
CE#=WE#=V
IL
, OE#=V
IH
, V
DD
=V
DD
Max
CE#=OE#=WE#=V
IH
, V
DD
=V
DD
Max
CE#=OE#=WE#=V
DD
-0.3V, V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
I
OL
=100 µA, V
DD
=V
DD
Min
I
OH
=-100 µA, V
DD
=V
DD
Min
T6.2 301
©2001 Silicon Storage Technology, Inc.
S71060-06-000 6/01
301
8
SST [ SILICON STORAGE TECHNOLOGY, INC ]
